2SB649A

2SB649A Transistor Specifications

• Collector-Emitter Volt (Vceo): -160V
• Collector-Base Volt (Vcbo): -180V
• Collector Current (Ic): -1.5A
• hfe: 60-200 @ -150mA
• Power Dissipation (Ptot): 20W
• Transition Frequency (ft): 140MHz
• Type: PNP - TO-126 package
• Complementary to 2SD669A